| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670606 | Microelectronic Engineering | 2005 | 7 Pages |
Abstract
The properties of submicrometer gold air-bridges are investigated for their suitability as elements of an electronic device. The fabrication procedure of a gated vertical quantum dot resonant tunneling diode structure implementing air-bridges is presented as a demonstration. Our investigations show that air-bridges produced by multiple acceleration voltage lithography exhibit excellent mechanical and electrical stability for nanotransport application.
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Authors
T. Borzenko, V. Hock, D. Supp, C. Gould, G. Schmidt, L.W. Molenkamp,