کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8546083 | 1561686 | 2018 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Radiofrequency electromagnetic radiation exposure effects on amygdala morphology, place preference behavior and brain caspase-3 activity in rats
ترجمه فارسی عنوان
اثرات مواجهه تابش الکترومغناطیسی رادیویی با مورفولوژی آمیگدال، رفتار ترجیحی مکان و فعالیت کاسپاز 3 مغز در موش صحرایی
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کلمات کلیدی
تابش الکترومغناطیسی رادیویی، تلفن همراه، آمیگدالا، اولویت محل، کاسپاز 3،
موضوعات مرتبط
علوم زیستی و بیوفناوری
علوم محیط زیست
بهداشت، سم شناسی و جهش زایی
چکیده انگلیسی
The purpose of the study was to evaluate the changes in amygdala morphology and emotional behaviors, upon exposure to chronic RF-EMR in adolescent rats. Four weeks old male albino Wistar rats were exposed to 900â¯MHz (power density:146.60â¯Î¼W/cm2) from a mobile phone in silent-mode for 28 days. Amygdala morphology was studied using cresyl violet, TUNEL and Golgi-Cox staining. Place preference behavior was studied using light/dark chamber test and following this brain caspase-3 activity was determined. Number of healthy neurons was decreased in the basolateral amygdala and cortical amygdala but not in the central amygdala after RF-EMR exposure. It also induced apoptosis in the amygdala. RF-EMR exposure altered dendritic arborization pattern in basolateral amygdala but not in the central amygdala. Altered place preference and hyperactivity-like behavior was evident after RF-EMR exposure, but brain caspase-3 activity did not change. RF-EMR exposure perturbed normal cellular architecture of amygdala and this was associated with altered place preference.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Environmental Toxicology and Pharmacology - Volume 58, March 2018, Pages 220-229
Journal: Environmental Toxicology and Pharmacology - Volume 58, March 2018, Pages 220-229
نویسندگان
Sareesh Naduvil Narayanan, Nirupam Mohapatra, Pamala John, Nalini K., Raju Suresh Kumar, Satheesha B. Nayak, P. Gopalakrishna Bhat,