Keywords: 73.21.Fg; 78.67.De; 78.67.-n; Asymmetric double parabolic and inverse parabolic quantum wells; Electronic and optical properties; Linear optical absorption; Linear optical rectification; Refractive index change; Resonant peak; Barrier width;
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Keywords: Nonlinear optical absorption; Semiparabolic quantum well; Density matrix approach42.65. −k; 71.35.Cc; 78.67.De
Study of electron-related optical responses in the Tietz-Hua quantum well: Role of applied external fields
Keywords: 73.21.Fg; 78.66.Fd; 78.67.De; Tietz-Hua quantum well; Optical response; Intense laser field;
Oscillator strengths for the intersubband transitions in GaAs/InGa1–xAs quantum wells and its strain dependence
Keywords: Highly strained quantum wells; k.p model; Subband structure; Intersubband transitions73.90.+f; 78.67.De
Structural nonlinear effects in In0.53Ga0.47As/GaAs heterostructure bipolar transistor lasers
Keywords: 42.70.Nq; 78.67.De; 85.30.PqNonlinear gain; Optical properties of quantum wells; Bipolar transistor
Resonant indirect exchange in 1D semiconductor nanostructures
Keywords: 75.75.âc; 78.55.Cr; 78.67.De; Indirect exchange interaction; RKKY; Dilute magnetic semiconductors; Graphene;
Optical spectra in the region of exciton resonances in quantum wells and quantum dots of In0.3Ga0.7As/GaAs heterostructures
Keywords: 71.36.+c; 78.40.Fy; 78.20.Ci; 78.55.Cr; 78.67.De; 78.67.Hc; Heterostructures; Quantum wells; Quantum dots; Reflection; Absorption; Luminescence; Excitons; Optical functions;
Strained GaAsSb/GaAs QW structures grown by MBE on GaAs (1 0 0) for applications near 1.3 micron
Keywords: 81.15.Hi; 81.15.Aa; 78.67.De; 85.35.Be; 81.07.StA3. Molecular beam epitaxy; A3. Quantum wells; B1. Antimonides; B3. Laser diodes
Laser field effect on the nonlinear optical properties of a square quantum well under the applied electric field
Keywords: 78.67.De; 42.65.Ky; Quantum well; Intersubband transition; Nonlinear optical properties;
The effect of magnetic field on acceptor impurity in a diluted magnetic quantum well system
Keywords: 73.60.cs; 75.70-I; 75.74ta; 78.67.De; A. Acceptor; A. Quantum well; A. Semimagnetic system;
Photoluminescence and surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs quantum well structures grown by metal organic vapor phase epitaxy
Keywords: 78.55.Cr; 78.67.−n; 78.67.De; 78.67.ptSemiconductors; Photoluminescence spectroscopy; Surface photovoltage spectroscopy; Optical properties
Simultaneous effects of pressure and magnetic field on intersubband optical transitions in Pöschl–Teller quantum well
Keywords: 78.67.De; 73.20.Dx; 83.60.NpQuantum well; Hydrostatic pressure; Magnetic field
Strained quantum wells in scrolled structures studied by μ-photoluminescence
Keywords: 78.67.De; 81.15.Hi; A1. Curved semiconducting layer stacks; A1. Low-dimensional structures; A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials;
Comparison of structural and optical properties of GaSb/AlGaSb quantum well structures grown on different oriented Si substrates
Keywords: 68.37.Lp; 78.55.Cr; 78.66.Fd; 78.67.De; 81.05.Ea; 81.15.HiA3. Molecular beam epitaxy; A3. Quantum wells; B1. Antimonides
Growth and characterization of m-plane GaN-based layers on LiAlO2 (1Â 0Â 0) grown by MOVPE
Keywords: 78.55.âm; 78.66.Fd; 78.67.De; A1. Characterization; A1. High resolution XRD; A3. MOVPE; A3. Quantum wells; B1. Nitrides;
Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4 μm range
Keywords: 81.05.Ea; 81.15.Hi; 78.67.de; 61.05.cp; A1. Photoluminescence; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Arsenides;
Defect reduction of laterally regrown GaN on GaN/patterned sapphire substrates
Keywords: 61.72.Dd; 61.72.Ff; 78.67.De; 81.05.Ea; 81.15.Gh; 85.60.JbA1. Defects; A1. Etching; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B1. Patterned sapphire substrate; B3. Light-emitting diodes
Exciton condensation in semiconductor quantum wells with a periodical modulation of potential
Keywords: 71.35.Lk; 78.67.De; 74.20.De; A. Quantum wells; D. Phase transitions;
Direct gap related optical transitions in Ge/SiGe quantum wells
Keywords: 73.21.Fg; 78.67.De; 72.40.++wQuantum wells; SiGe; Absorption; Photocurrent
Detector and readout performance goals for quantum well and strained layer superlattice focal plane arrays imaging under tactical and strategic backgrounds
Keywords: 78.30.Fs; 78.67.De; 78.67.Pt; Infrared; Focal plane arrays; Strained layer superlattice; Quantum well;
Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method
Keywords: 78.67.De; 78.55.−m; 81.40.EfA3. Quantum well; B1. Dilute nitride; Rapid thermal annealing; B1. InGaAs; B1. GaInNAs
Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatments
Keywords: 81.05.Ea; 81.15.Hi; 68.37.Ps; 78.67.De; 68.49.Sf; A1. Carbon; A1. GaAs surface treatment; A1. Impurities; A1. Oxygen; A3. Quantum wells;
Optical investigations of Berthelot-type properties in quaternary AlInGaN multiple quantum well heterosystems
Keywords: 85.60.Jb; 78.67.De; 78.55.CrA3. Multiple quantum well; B2. Semiconductor quaternary alloys; B3. Light-emitting diodes.
Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealing
Keywords: 78.67.De; Ion implantation; ZnO/ZnMgO multiple quantum wells; Thermal photoluminescence quenching;
Quadratic detection with two-photon quantum well infrared photodetectors
Keywords: 78.67.De; 73.21.Fg; 82.53.Mj; 85.60.Gz; 42.50.Md; Quantum well infrared photodetector; Two-photon intersubband transition; Quadratic autocorrelation;
Quantum Size Effect and very localized random laser in ZnO@mesoporous silica nanocomposite following a two-photon absorption process
Keywords: 81.05.Zx; 78.45.+h; 78.55.−m; 78.30.Fs; 78.67.De; 78.67.Hc; 78.67.It; 78.55.Mb; 72.80.Tm; 61.43.Gt; 61.46.+w; 61.66.FnII–VI semiconductors; Laser–matter interactions; Optical spectroscopy; STEM/TEM; TEM/STEM; Powders; Nano-composites; Nanoparticles; Quant
Dots, QWISPs, and BIRDs
Keywords: 85.60.Gz; 78.67.Hc; 78.67.De; 78.67.Pt; Infrared detector; Quantum well; Quantum dot; QWIP; Superlattice;
Analysis and comparison of n-AlxGa1âxAs/GaAs QWIPs with different device structures and optical coupling
Keywords: 85.60.Bt; 78.20.Ci; 78.67.De; 87.55.Gh; QWIP; FPA; Optical coupling efficiency; Absorption coefficient; Optical field; Responsivity;
The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells
Keywords: 64.75.+g; 78.67.−n; 78.67.De; 71.35.−yIndium segregation; Optical gain; Valence band structure; Quantum well
Dynamic propagation study of phase-controlled infrared-light pulses in low-dimensional semiconductor heterostructures
Keywords: 78.20.Bh; 78.67.De; 42.50.Gy; 42.65.Sf; Semiconductor quantum well; Relative phase; Gain and absorption; Loss-free propagation;
Linear and nonlinear intersubband optical absorption in double triangular quantum wells
Keywords: 78.67.De; 78.20.Ci; 42.65.An; 73.21.FgA. Quantum wells; D. Optical properties; D. Electronic states; D. Applied electric field effects
Mid-infrared efficient generation by resonant four-wave mixing in a three-coupled-quantum-well nanostructure
Keywords: 42.50.Gy; 42.65.Ky; 78.67.De; 42.50.Hz; Four-wave mixing (FWM); Intersubband transitions (ISBTs); Three-coupled-quantum-wells (TCQWs);
Coherent laser-induced optical behaviors in three-coupled-quantum wells and their application to terahertz signal detection
Keywords: 42.50.Gy; 78.67.De; 42.50.HzThree-coupled-quantum wells (TCQW); Intersubband transitions (ISBTs); Terahertz (TH) radiation
Entanglement via tunable Fano-type interference in asymmetric semiconductor quantum wells
Keywords: 42.50.Dv; 03.67.Mn; 78.67.De; Quantum entanglement; Fano-type interference; Double quantum wells (DQWs);
Phase-dependent gain and absorption properties of mid- to far-infrared lights in three-coupled-quantum-wells
Keywords: 42.50.Gy; 78.67.De; 42.50.Hz; Phase-dependent gain and absorption; Intersubband transitions (ISBTs); Three-coupled-quantum-wells (TCQWs);
Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy
Keywords: 78.55.Cr; 78.67.De; 81.15.HiA1. Low dimensional structures; B1. Nitrides; B2. Semiconducting III–V materials; A3. Molecular beam epitaxy
Giant optical anisotropy in R-plane GaN/AlGaN quantum wells caused by valence band mixing effect
Keywords: 68.65.Fg; 78.55.Cr; 78.67.De; R-plane; Optical anisotropy; Valence band mixing; Optical matrix element;
Micro-photoluminescence excitation spectroscopy on asymmetric absorption line shapes of weakly localized excitons in a quantum well
Keywords: 73.21.Fg; 78.55.Cr; 78.67.De; A. Quantum wells; D. Exciton localization; D. Optical properties; E. Photoluminescence;
Intense terahertz laser fields on a two-dimensional hole gas with Rashba spin–orbit coupling
Keywords: 71.70.Ej; 78.67.De; 73.21.Fg; 78.90.--tTerahertz; Spintronics
Spatial emission characteristics of a semiconductor microtube ring resonator
Keywords: 78.66.Fd; 78.67.De; 42.82.Cr; 42.55.SaMicrocavity; Microtube; Directional emission
Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells
Keywords: 78.67.De; 78.47.+p; 42.65.-k; 72.25.FeA. Semiconductors; A. Nanostructures; D. Optical properties; E. Nonlinear optics
Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems
Keywords: 73.21.Fg; 72.25.Fe; 78.67.De; 73.63.HsA. Gallium nitride; A. Two-dimensional systems; D. Photogalvanic effects
On the long-wavelength optimization of highly strained InGaAs/GaAs quantum wells grown by metal–organic vapor-phase epitaxy
Keywords: 68.65.Fg; 78.67.De; 81.15.KkA1. Photoluminescence; A1. Substrates; A3. Metal–organic vapor-phase epitaxy; A3. Quantum wells; B2. InGaAs
Simultaneous effects of pressure and magnetic field on donors in a parabolic quantum dot
Keywords: 73.20 Dx; 73.20.Hb; 75.74 ta; 78.67.De; A. Coupled quantum dots; D. Spin-dependent transport; D. Coulomb-blockade; D. Spin-flip effect;
Correlation coefficient for dephasing of light-hole excitons and heavy-hole excitons in GaAs quantum wells
Keywords: 71.35.-y; 71.55.Eq; 78.47.+p; 78.67.De; 42.65.-k; A. Semiconductors; A. Quantum wells; D. Optical properties; E. Nonlinear optics;
Optical bistability in a triple semiconductor quantum well structure with tunnelling-induced interference
Keywords: 78.67.De; 42.65.Pc; 42.50.CtQuantum well (QW); Optical bistability (OB); Tunnelling-induced interference
Polarization qubit phase gate in a coupled quantum-well nanostructure
Keywords: 03.67.Lx; 78.67.De; 42.65.-kQubit phase gate; Intersubband transitions; Semiconductor quantum well
Efficient four-wave mixing of a coupled double quantum-well nanostructure
Keywords: 78.67.De; 42.50.Gy; 42.65.Ky; Four-wave mixing (FWM); Intersubband transitions; Semiconductor quantum well;
Stark-like electron transfer between quantum wells
Keywords: 73.63.Hs; 85.35.Be; 78.67.De;
Magnetic field effect on transitions between direct and indirect excitons in diluted magnetic semiconductor double quantum wells
Keywords: 78.40.Fy; 78.67.De; 75.75.+a; 71.35.−yDouble quantum well; Exciton; Semimagnetic semiconductors