Keywords: ترانزیستور اتصال دو قطبی; Bipolar junction transistor; Electron; Heavy ion; Interface traps; Minority lifetime; Radiation damage;
مقالات ISI ترانزیستور اتصال دو قطبی (ترجمه نشده)
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در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: ترانزیستور اتصال دو قطبی; DC; direct current; AC; alternating current; MOSFET; metaloxidesemiconductor field-effect transistor; SBD; Schottky barrier diodes; MPPT; maximum power point tracking; PWM; pulse width modulation; JFET; junction field-effect transistor; BJT; bipolar junct
Keywords: ترانزیستور اتصال دو قطبی; PV; Photovoltaic; IEC; International Electro technical commission; IEEE; Institute of Electronics and Electrical Engineers; NEC; National Electrical Code; DR; Distributed Resource; DC; Direct Current; AC; Alternative Current; THD; Total harmonics distorti
Keywords: ترانزیستور اتصال دو قطبی; Bipolar junction transistor; Semiconductor; Radiotherapy
Experimental studies of collector-emitter voltage bias influence on the total ionization dose effects in NPN Si BJTs
Keywords: ترانزیستور اتصال دو قطبی; Bipolar junction transistor; Total ionization dose effects; Collector-emitter voltage bias conditions; Excess base current; Ideality factor; Power dissipation;
Analysis of deep level defects in bipolar junction transistors irradiated by 2Â MeV electrons
Keywords: ترانزیستور اتصال دو قطبی; Electron irradiation; Bipolar junction transistor; Deep level defects; Deep level transient spectroscopy;
Influence of base carrier lifetime on the characteristics of 4H-SiC BJTs
Keywords: ترانزیستور اتصال دو قطبی; Bipolar junction transistor; Lifetime; Switching characteristic; Charge storage;
A comparison of lower and higher LET heavy ion irradiation effects on silicon NPN rf power transistors
Keywords: ترانزیستور اتصال دو قطبی; Bipolar junction transistor; Higher LET ions; Current gain degradation; Isochronal annealing
Fabrication of bipolar junction transistor on (001)-oriented diamond by utilizing phosphorus-doped n-type diamond base
Keywords: ترانزیستور اتصال دو قطبی; Bipolar junction transistor; Diffusion length; Phosphorus doping; n-Type conductivity; Chemical vapor deposition; Heavily phosphorus doped diamond
Diamond bipolar junction transistor device with phosphorus-doped diamond base layer
Keywords: ترانزیستور اتصال دو قطبی; Bipolar junction transistor; Phosphorus-doped diamond; Current amplification; p–n–p; CVD
Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part I - Static analysis
Keywords: ترانزیستور اتصال دو قطبی; Aluminum nitride; Bipolar junction transistor; Dielectric isolation; Finite element method; Heatsinks; Heatspreaders; Silicon-on-glass; Silicon-on-insulator; Thermal behavior; Thermal design; Thermal resistance; Trench isolation;
Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part II – Dynamic analysis
Keywords: ترانزیستور اتصال دو قطبی; Aluminum nitride; Bipolar junction transistor; Foster network; Heatspreader; Self-heating; Silicon-on-glass; Thermal cut-off; Thermal impedance; Thermal resistance; Thermal transient
BJT-based detector on high-resistivity silicon with integrated biasing structure
Keywords: ترانزیستور اتصال دو قطبی; 85.30.De; 85.60.Dw; 87.66.PmRadiation detectors; Bipolar junction transistor; Phototransistor; High-resistivity silicon
Analytical model for base transit time of a bipolar transistor with Gaussian-doped base
Keywords: ترانزیستور اتصال دو قطبی; Bipolar junction transistor; Base transit time
Modeling the DC gain of 4H-SiC bipolar transistors as a function of surface recombination velocity
Keywords: ترانزیستور اتصال دو قطبی; Silicon carbide; Bipolar junction transistor; Surface recombination velocity; DC current gain; Device modeling; PISCES-IIB;