Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
Keywords: الکترون مؤثر; 72.20.−i; 77.55.+fHigh-k gate stacks; HfO2; Reverse modeling; Direct tunneling; Electron effective mass; Electron affinity; Bulk properties; 32 nm and 22 nm technology nodes