Keywords: اندازه گیری تالار; Graphene; Inhomogeneous; Hall measurement; Mobility; Numerical simulation
مقالات ISI اندازه گیری تالار (ترجمه نشده)
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Hole conduction characteristics of cubic Ti1âxAlxN
Keywords: اندازه گیری تالار; Cubic titanium aluminum nitride; Radio-frequency magnetron sputtering; Cathodic arc ion plating; Hall measurement; Variable range hopping conduction; Thermally activated mobility; Grain boundary; Hole concentration;
Excimer laser annealing: An alternative route and its optimisation to effectively activate Si dopants in AlN films grown by plasma assisted molecular beam epitaxy
Keywords: اندازه گیری تالار; Laser annealing; Nitrides; MBE; X-ray diffraction; Raman spectroscopy; Hall measurement;
Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films
Keywords: اندازه گیری تالار; Transparent conducting oxide; Zinc tin oxides; Amorphous oxide thin films; Kelvin probe force microscopy; Hall measurement; Compositional dependence;
Influence of 100Â keV Ar+ implantation on electrical and optical properties of TiO2/Ag/TiO2 multilayer films
Keywords: اندازه گیری تالار; Transparent conducting oxide; Implantation; Multilayer films; Hall measurement; Transmittance;
NTO/Ag/NTO multilayer transparent conducting electrodes for photovoltaic applications tuned by low energy ion implantation
Keywords: اندازه گیری تالار; Transparent conducting films; Photovoltaic; Ion implantation; Hall measurement; X-ray photoelectron spectroscopy (XPS);
Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties
Keywords: اندازه گیری تالار; Halide vapor phase epitaxy; Homoepitaxy; β-Ga2O3; Hall measurement; Electronic properties;
Polymer-metal-polymer (PMP) multilayer transparent electrode for organic optoelectronics
Keywords: اندازه گیری تالار; Polymer; Multilayer; Transparent electrode; Hall measurement; XPS;
Transport properties of n- and p-type polycrystalline BaSi2
Keywords: اندازه گیری تالار; Barium disilicide; Polycrystalline film; Hall measurement; Electron and hole mobilities;
Effects of surface reconstruction on the epitaxial growth of III-Sb on GaAs using interfacial misfit array
Keywords: اندازه گیری تالار; Epitaxial growth; Surface reconstruction; AFM; Reciprocal space map; TEM; Hall measurement;
Fabrication of highly efficient TiO2/Ag/TiO2 multilayer transparent conducting electrode with N ion implantation for optoelectronic applications
Keywords: اندازه گیری تالار; Transparent conducting oxide; Multilayer; Implantation; Hall measurement;
Different annealing temperature suitable for different Mg doped P-GaN
Keywords: اندازه گیری تالار; P-GaN; PL; Hall measurement;
Effects of Ge substitution on morphology and electrical properties of Cu2Sn(S,Se)3 bulk at a fixed Se/[Se+S] composition
Keywords: اندازه گیری تالار; Reactive sintering; Grain boundary; Densification; Crystalline size; Hall measurement; Cu2Sn(S; Se)3;
Excimer laser annealing effects on AlGaN/GaN heterostructures
Keywords: اندازه گیری تالار; GaN; Laser annealing; Hall measurement; PL; XPS
Role of materials chemistry on the electrical/electronic properties of CuO thin films
Keywords: اندازه گیری تالار; Copper oxides; Alloy chemistry; Hall measurement; Current-voltage characteristics; Schottky junction;
Synthesis and characterization of antiperovskite nitrides GaNCr3−xMnx
Keywords: اندازه گیری تالار; Cr-based antiperovskite; Magnetism; Electrical/thermal transport; Hall measurement
Interface properties determined the performance of thermally grown GaN/Si heterojunction solar cells
Keywords: اندازه گیری تالار; GaN; Si; Heterostructure; Chemical vapor deposition; Solar cell; Hall measurement
Electrostatics analysis of two Hall measurement configurations
Keywords: اندازه گیری تالار; Hall measurement; Van der Pauw technique; Electrostatics boundary-value problem
Preparation of structurally modified, conductivity enhanced-p-CuSCN and its application in dye-sensitized solid-state solar cells
Keywords: اندازه گیری تالار; CuSCN; Hall measurement; Dye-sensitized solid-state solar cell; AC impedance
Conductivity modification of ZnO film by low energy Fe10+ ion implantation
Keywords: اندازه گیری تالار; Ion implantation; p-type ZnO; Photoluminescence; Hall measurement;
Hall data analysis of heavily boron-doped CVD diamond films using a model considering an impurity band well separated from valence bands
Keywords: اندازه گیری تالار; Diamond film; Homoepitaxy; Microwave plasma CVD; Hall measurement; Transport property; Impurity band
On the origin of intrinsic donors in ZnO
Keywords: اندازه گیری تالار; 41.60.Dk; 73.50.Gr; 73.61.Ga; 78.55.Et; Zinc oxide; Intrinsic donors; Hall measurement; Carrier concentration;
Single-step sputtered Cu2SnSe3 films using the targets composed of Cu2Se and SnSe2
Keywords: اندازه گیری تالار; Sputtering; Thin films; Cu2SnSe3; SnSe2; Hall measurement
Ohmic contacts and n-type doping on TixCr2 â xO3 films and the temperature dependence of their transport properties
Keywords: اندازه گیری تالار; CrTiO; Ohmic contacts; Semiconductor oxide; Doping; Hall measurement; Mobility; Charge; Carrier density;
Effect of post-deposition annealing on the performance of D.C. sputtered Cu2SnSe3 thin films
Keywords: اندازه گیری تالار; D.C. sputtering; Solar cell; Hall measurement
Impact of ZnTe buffer on the electrical properties of n-type GaSb:Te films
Keywords: اندازه گیری تالار; 61.72. Tt; 73.20. Mf; 81.15. Hi; Molecular beam epitaxy; GaSb; Doping; Hall measurement;
AlGaN/GaN heterostructure grown on 1â -tilt sapphire substrate by MOCVD
Keywords: اندازه گیری تالار; Vicinal-cut sapphire; AlGaN/GaN; MOCVD; XRD; AFM; Hall measurement;
Psychological experiments on listener envelopment when both the early-to-late sound level and directional late energy ratios are varied, and consideration of calculated LEV in actual halls
Keywords: اندازه گیری تالار; Listener envelopment; Early-to-late sound level; Directional late energy ratio; Psychological experiment; Hall measurement
Influence of substrate temperature on N-doped ZnO films deposited by RF magnetron sputtering
Keywords: اندازه گیری تالار; ZnO thin films; Sputtering; XPS; SIMS; Hall measurement
Single crystalline β-FeSi2 grown using high-purity FeSi2 source
Keywords: اندازه گیری تالار; β-FeSi2; Single crystal; Solution growth; Hall measurement
Influence of the reactive N2 gas flow on the properties of rf-sputtered ZnO thin films
Keywords: اندازه گیری تالار; ZnO thin films; Sputtering; XPS; SIMS; Hall measurement
Electron scattering mechanisms in indium-tin-oxide thin films prepared at the various process conditions
Keywords: اندازه گیری تالار; Indium-tin-oxide (ITO); DC magnetron sputtering; Hall measurement; Carrier concentration; Carrier mobility; Surface roughness; Scattering;
The behaviors of the carrier concentrations and mobilities in indium-tin-oxide thin films by DC and RF-superimposed DC reactive magnetron sputtering at the various process temperatures
Keywords: اندازه گیری تالار; Indium-tin-oxide; Sputtering; Hall measurement; Carrier concentration; Carrier mobility; Process temperature;
Highly conducting transparent nanocrystalline Cd1−xSnxS thin film synthesized by RF magnetron sputtering and studies on its optical, electrical and field emission properties
Keywords: اندازه گیری تالار; CdS:Sn; Conducting; Transparent; EDX; Optical; Field emission; Hall measurement
Study on the transport properties of MnGe(As1âxPx)2 grown on GaAs(1Â 0Â 0)
Keywords: اندازه گیری تالار; 75.70; 81.15.H; 75.50.P; MnGe(As1âxPx)2; GaAs(100); Magnetoresistance; Molecular beam epitaxy; Hall measurement; Transport property;
ISD process development for coated conductors
Keywords: اندازه گیری تالار; 85.25.Kx; 74.76.Bz; 85.25.Am; 74.72.âh; Coated conductors; Inclined substrate deposition; Hall measurement; RBCO; MgO-buffer;