Keywords: عمق اتصال; Deep diffusion; EBIC; Junction depth; Laser doping;
مقالات ISI عمق اتصال (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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Keywords: عمق اتصال; Atmospheric pressure; Black silicon; Dry etching; Multicrystalline silicon; Nanotexture; Process simulation; Solar cells; Electron beam induced current (EBIC); Junction depth
Impact of boron doping profiles on the specific contact resistance of screen printed Ag–Al contacts on silicon
Keywords: عمق اتصال; Silicon solar cells; Specific contact resistance; Boron emitter; Junction depth; Crystallites
Shallow junction characteristics due to low temperature BGe molecular ion implantation into silicon
Keywords: عمق اتصال; 61.72.Tt; 61.80.Jh; 81.40.Ef; 85.40.Ry; 84.37.tq; 73.40.Kp; Molecular ion implantation; Shallow junction; Annealing; Transient-enhanced diffusion; Junction depth; Sheet resistance;
Design and optimization of beta-cell temperature sensor based on 63Ni–Si
Keywords: عمق اتصال; Silicon beta-cell temperature sensor; Nickel-63; MCNP4C Monte Carlo code; Doping concentration; Junction depth
Controlling surface shallow junction depth by a rapid thermal annealing process with low ambient pressure
Keywords: عمق اتصال; Phosphorous diffusion; Rapid thermal annealing; Transient enhanced out-diffusion; Dose loss; Junction depth;
Characterization of radiation damage induced by B and B4 ion implantation into silicon
Keywords: عمق اتصال; Cluster ion implantation; Shallow junction; Annealing; Transient-enhanced diffusion; Junction depth; Sheet resistance;
Post-annealing effects on the shallow-junction characteristics caused by high-fluence 77 keV BSi molecular ion implantations at room and liquid nitrogen temperatures
Keywords: عمق اتصال; 61.72.Tt; 61.80.Jh; 81.40.Ef; 85.40.Ry; 84.37.Tq; 73.40.KpMolecular ion implantation; Shallow junction; Annealing; Transient-enhanced diffusion; Junction depth; Sheet resistance
The influence of junction depth on short channel effects in vertical sidewall MOSFETs
Keywords: عمق اتصال; Vertical sidewall MOSFET; Junction stop; Junction depth; Charge sharing; DIBL; Bulk punch-through; Ion/Ioff; Retrograde channel; Critical point
Simulation and experimental results on the forward J–V characteristic of Al implanted 4H–SiC p–i–n diodes
Keywords: عمق اتصال; 4H–SiC p–i–n diode; J–V characteristic; Ion implantation; Doping profile; Junction depth
Two-step post-annealing effects on the shallow-junction characteristics produced by BGe molecular ion implantation
Keywords: عمق اتصال; 61.72.Tt; 61.80.Jh; 81.40.Ef; 85.40.Ry; 84.37.tq; 73.40.KpMolecular ion implantation; Shallow junction; Annealing; Transient-enhanced diffusion; Sheet resistance; Junction depth
Post-annealing effects on shallow-junction characteristics caused by 20Â keV BGe molecular ion implantation
Keywords: عمق اتصال; 61.72.Tt; 61.80.Jh; 81.40.Ef; 85.40.Ry; 84.37.tq; 73.40.Kp; Molecular ion implantation; Shallow junction; Annealing; Transient-enhanced diffusion; Sheet resistance; Junction depth;
Implantation and post-annealing characteristics when impinging small Bn clusters into silicon at low fluence
Keywords: عمق اتصال; 61.72.Tt; 81.40.Ef; 85.40.Ry; 73.40.Lq; 73.40.Cg; Cluster ion implantation; Annealing; Transient-enhanced diffusion; Junction depth; Sheet resistance;