کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10133577 | 1645598 | 2018 | 18 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thin Si wafer substrate bonding and de-bonding below 250â°C for the monolithic 3D integration
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We studied low temperature (<250â°C) transfer of 8âin. full sized thin Si wafer layer on the SiO2/Si substrate without any wafer flip up/down and subsequent high temperature process. This method includes temporary bonding of carrier wafer with bonding material at 200â°C, grinding or etching substrate, and transfer layer at 250â°C. Thickness values of transferred thin Si layer using bulk Si and silicon-on-insulator (SOI) wafer substrates are 87âμm and 216ânm on the SiO2/Si substrate, respectively. Plasma treatment under N2 and O2 mixture ambient assisting to form hydrophilic surface was carried out during bonding process and enhanced bonding strength was confirmed by contact angle measurement. Our wafer bonding process can be feasible to form various monolithic 3D devices due to thin Si layer transfer and low temperature process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 281, 1 October 2018, Pages 222-228
Journal: Sensors and Actuators A: Physical - Volume 281, 1 October 2018, Pages 222-228
نویسندگان
Yu-Rim Jeon, Hoonhee Han, Changhwan Choi,