کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10141867 | 1646083 | 2019 | 15 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improved thermoelectric properties in Zn0.94Al0.06Ox films caused by oxygen defects via oxygen pressure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Al-doped ZnO films (Zn0.94Al0.06Ox) can be fabricated by thermal oxidation of evaporated metallic Zn-Al film. Oxygen defects were strongly related to oxygen pressure at a given temperature (500â¯Â°C) and duration (3â¯h). Under oxygen pressure of 0.021â¯MPa (O2-0.021â¯MPa), the main component was the Zn phase. Zn0.94Al0.06Ox films were formed under oxygen pressure of 0.1â¯MPa and 0.12â¯MPa, with the conductivity and Seebeck coefficient improving simultaneously with increased oxygen pressure. The flat particles of the O2-0.12â¯MPa film weakened the electron scattering, leading to increased conductivity. Furthermore, the decrease in oxygen vacancies caused by the higher oxygen pressure increased the Seebeck coefficient. As a result, the power factor of the O2-0.12â¯MPa film was about 30 times greater than that of the O2-0.1â¯MPa film, characterized by an increasing content of singly ionised oxygen.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 124, January 2019, Pages 13-18
Journal: Journal of Physics and Chemistry of Solids - Volume 124, January 2019, Pages 13-18
نویسندگان
Shiying Liu, Guojian Li, Yongjun Piao, Ling Chang, Yang Gao, Qiang Wang,