Optical properties improvement of InGaAs/GaInP single quantum well grown by metal-organic chemical vapor deposition

The optical properties of InGaAs/GaInP quantum well (QW), with GaAs ultra-thin interlayers inserted between QW and barriers, is investigated. Samples are grown by metal-organic chemical vapor deposition (MOCVD) and characterized with photoluminescence (PL). For comparison, samples of InGaAs/GaAs and InGaAs/GaInP without GaAs ultra-thin layers are fabricated as well. The PL intensity of sample with GaAs interlayers is more than 10 times larger than that of the regular InGaAs/GaInP QWs. Temperature-dependent PL is applied for further investigation of optical properties and all of the samples exhibit PL quenching except for sample with GaAs interlayers, which demonstrates the improvement of optical properties after ultra-thin interlayers are induced.