کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10409907 | 894188 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improvement of isolation for MEMS capacitive switch via membrane planarization
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A new membrane planarization method on uneven surfaces of sacrificial layer is developed in this work to enhance the isolation of the capacitive shunt switch using microelectromechanical systems (MEMS) technology. In this method, the coplanar waveguide (CPW) slots are filled with the photoresist to planarize the uneven surfaces of the sacrificial layer. The surface contact area between the metal bridge and the dielectric layer is greatly increased after the planarization. Measurement results show that the isolation can be improved by 2.2Â dB at 15Â GHz and 10Â dB at 40Â GHz. In the up-state of switch, the insertion loss is less than 0.4Â dB and the return loss is more than â15Â dB up to 40Â GHz. The proposed planarization method is relatively simple and cheap compared to the chemical mechanical polish (CMP) in terms of fabrication and engineering implementation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 119, Issue 1, 28 March 2005, Pages 206-213
Journal: Sensors and Actuators A: Physical - Volume 119, Issue 1, 28 March 2005, Pages 206-213
نویسندگان
A.B. Yu, A.Q. Liu, Q.X. Zhang, A. Alphones, L. Zhu, A.P. Shacklock,