Fabrication and electrical characterizations of SGOI tunnel FETs with gate length down to 50Â nm

We report the fabrication and the characterization of tunnel FETs fabricated on SiGe-On-Insulator with a High-κ Metal Gate (HKMG) CMOS process. The beneficial impact of low band gap SiGe channel on ID(VG) characteristics is presented and analyzed: compressive Si0.75Ge0.25 enables to increase by a factor of 25 the saturation currents, even at small gate length (LG = 50 nm). This large gain is due to the threshold voltage shift and to enhanced intrinsic band-to-band tunneling injection (both related to the narrow band gap of SiGe channels).