کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411734 | 894788 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Selectively hydrogen-pretreated AlGaAs/InGaAs p-HEMTs and their application to an enhancement/depletion-mode HEMT
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
DC, RF, and low-frequency noise characteristics of selectively hydrogen-pretreated Al0.24Ga0.76As/In0.2Ga0.8As double heterostructure pseudomorphic high electron mobility transistors (p-HEMTs) were investigated. The gate region of the p-HEMTs was exposed to a hydrogen plasma in a reactive ion etching chamber, followed by a thermal annealing, prior to a gate metallization. Strong dependence of the threshold voltage, the gate leakage current, and low-frequency noise characteristics on the RF power of the hydrogen plasma and the annealing temperature was observed. Control of the donor density in the selectively hydrogen-pretreated gate region produced a threshold voltage shift as large as 1Â V, which was successfully used for a fabrication of enhancement/depletion HEMTs (E/D-HEMTs). The selective hydrogen pretreatment (SHP) produced improved gate leakage current, breakdown voltage, and low-frequency characteristics. These results indicate the potential of the selective hydrogen pretreatment for use in an easy fabrication of E/D-HEMTs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 1, January 2005, Pages 19-24
Journal: Solid-State Electronics - Volume 49, Issue 1, January 2005, Pages 19-24
نویسندگان
In-Ho Kang, Jung-Hoon Kim, Won-Bae Kim, Jong-In Song,