کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411737 | 894788 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
AlGaInP light emitting diode with a current-blocking structure
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A simple current-blocking process was presented and proved to increase the luminous intensity of AlGaInP light-emitting diodes (LEDs). Deeper blocking depth would dramatically raise the luminous intensity of devices. If the chip size was small, however, deeper blocking depth would increase the junction temperature under a higher operation current. On the whole, with a current-blocking layer embedded in the current-spreading layer, the luminous intensity increased to 1.19 and 1.13 times at 20 mA for 9 mil (280 Ã 280 μm2) and 16 mil (406 Ã 406 μm2) devices respectively, compared with that of the conventional structures. In terms of energy-saving, LEDs with the current-blocking layer can save roughly 42% of energy consumption compared with that having a conventional structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 1, January 2005, Pages 37-41
Journal: Solid-State Electronics - Volume 49, Issue 1, January 2005, Pages 37-41
نویسندگان
H.C. Wang, Y.K. Su, Y.H. Chung, C.L. Lin, W.B. Chen, S.M. Chen,