Dynamic threshold voltage MOS in partially depleted SOI technology: a wide frequency band analysis

This paper analyzes the frequency dependence of the gate transconductance (Gm) and output conductance (Gd) of a DTMOS in 0.25 μm PD SOI MOS technology. Our experimental results demonstrate for the first time that DTMOS devices suffer from a strong degradation of Gm and Gd around 1 GHz. An equivalent small-signal circuit is proposed to explain the observed phenomena. The model clearly identifies the non-zero value of the body contact resistance as the source of the Gm and Gd degradation. DTMOS stays a promising MOS structure for low power, low voltage high frequency applications.