Facile modification of Cu source-drain (S/D) electrodes for high-performance, low-voltage n-channel organic thin film transistors (OTFTs) based on C60

- High-performance C60 based OTFTs with low operation voltage.
- Low-cost Cu modified by PEI as S/D electrodes.
- Electron mobility up to 3.2 cm2/V s is obtained on modified device.
- Improved interface property between Cu and C60 upon interface modification.