Light-induced enhancement of quantum dot photovoltaic devices with nitrogen doped titanium oxide capping layers

Efficiency dependence on light anneal cycles and device configuration TiOxNy is first time used as an interfacial layer in CdSe QD/P3HT solar cell, which exhibits extraordinary efficiency enhancement after a unique light anneal process due to improved charge collection and association rate. As a diffusion barrier, TiOxNy shows significant device stability improvement by blocking O2, moisture, and metal atoms.