Effect of doping by bismuth on dielectric properties and relaxor behavior in the Ba1−xBi2x/3(Yb0.5Nb0.5)0.05Ti0.95O3 solid solution

Solid solutions of Ba1−xBi2x/3(Yb0.5Nb0.5)0.05Ti0.95O3 (0≤x≤0.2) were prepared using the conventional solid state reaction method. The effect of the substitution of Ba by Bi in the cationic site on structural and dielectric properties was investigated. X-ray diffraction at room temperature and dielectric permittivity in the temperature range from 85 to 500 K and frequency range from 102 Hz to 106 Hz, respectively, were studied. A clear relaxor behavior close to room temperature was observed and the degree of relaxation increased with Bi concentration (γ=1.58-1.9 for x=0.05-0.2 respectively), which opens the way for possible use of this material for capacitor applications.