RF reactive magnetron sputtering for Fe-doped titania films deposited from ceramic targets

Fe-doped titania films are prepared by RF magnetron sputtering on Si wafers with specifically designed TiO2 targets containing different amounts of Fe2O3 powder as a dopant source. The physical properties of the films are investigated in terms of the preparation conditions, such as Fe2O3 content in the target, RF power, substrate temperature and working pressure. The films show the typical crystallographic orientation. The growth rate increases with increasing RF power, but decreases with working pressure. Films with 40 nm and the transmittance over 90% at the visible region are prepared by using Fe-doped titania target.