کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10669760 | 1008786 | 2014 | 21 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical characterization of epitaxial single crystal CdTe thin films on Al2O3 (0001) substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Optical characterization of epitaxial single crystal CdTe thin films on Al2O3 (0001) substrates Optical characterization of epitaxial single crystal CdTe thin films on Al2O3 (0001) substrates](/preview/png/10669760.png)
چکیده انگلیسی
The optoelectronic properties of single crystal CdTe thin films were investigated by photoluminescence spectroscopy, photoreflectance spectroscopy and variable angle spectroscopic ellipsometry. The room temperature bandgap was measured to be 1.51Â eV and was consistent between spectroscopic measurements and previously reported values. Breadth of bandgap emission was consistent with high quality material. Low temperature photoluminescence spectra indicated a dominant emission consistent with bound excitons. Emissions corresponding to self-compensation defects, doping and contaminants were not found. Variable angle spectroscopic ellipsometry measurements over the near-UV to infrared range demonstrated sharp resonance peaks. All spectroscopic measurements indicate high quality thin film material of comparable or better quality than bulk CdTe.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 570, Part A, 3 November 2014, Pages 155-158
Journal: Thin Solid Films - Volume 570, Part A, 3 November 2014, Pages 155-158
نویسندگان
S.M. Jovanovic, G.A. Devenyi, V.M. Jarvis, K. Meinander, C.M. Haapamaki, P. Kuyanov, M. Gerber, R.R. LaPierre, J.S. Preston,