کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10714137 | 1025569 | 2012 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Numerical optimization of carrier confinement characteristics in (AlxGa1âxN/AlN)SLs/GaN heterostructures
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Numerical optimization of carrier confinement characteristics in (AlxGa1âxN/AlN)SLs/GaN heterostructures Numerical optimization of carrier confinement characteristics in (AlxGa1âxN/AlN)SLs/GaN heterostructures](/preview/png/10714137.png)
چکیده انگلیسی
We present numerical optimization of carrier confinement characteristics in (AlxGa1âxN/AlN)SLs/GaN heterostructures in the presence of spontaneous and piezoelectrically induced polarization effects. The calculations were made using a self-consistent solution of the Schrödinger, Poisson, potential and charge balance equations. It is found that the sheet carrier density in GaN channel increases nearly linearly with the thickness of AlN although the whole thickness and equivalent Al composition of AlxGa1âxN/AlN superlattices (SLs) barrier are kept constant. This result leads to the carrier confinement capability approaches saturation with thicknesses of AlN greater than 0.6Â nm. Furthermore, the influence of carrier concentration distribution on carrier mobility was discussed. Theoretical calculations indicate that the achievement of high sheet carrier density is a trade-off with mobility.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 407, Issue 18, 15 September 2012, Pages 3920-3924
Journal: Physica B: Condensed Matter - Volume 407, Issue 18, 15 September 2012, Pages 3920-3924
نویسندگان
Jieqin Ding, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang,