کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11003417 | 1458688 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interfacial thermal resistance between porous layers: Impact on thermal conductivity of a multilayered porous structure
ترجمه فارسی عنوان
مقاومت حرارتی بین لایه های متخلخل: تاثیر هدایت حرارتی یک ساختار متخلخل چند لایه
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
جریان سیال و فرایندهای انتقال
چکیده انگلیسی
Features of thermal transport in multilayered porous silicon nanostructures are considered. Such nanostructures were fabricated by electrochemical etching of monocrystalline Si substrates by applying periodically changed current density. Hereby, the multilayered structures with specific phononic properties were formed. Photoacoustic (PA) technique in gas-microphone configuration was applied for thermal conductivity evaluation. Experimental amplitude-frequency dependencies were adjusted by temperature distribution simulation with thermal conductivity of the multilayered porous structure as a fitting parameter. The experimentally determined values of thermal conductivity were found to be significantly lower than theoretically calculated ones. Such difference was associated with the presence of thermal resistance at the interfaces between porous layers with different porosities arising because of elastic parameters mismatch (acoustical mismatch). Accordingly, the magnitude of this interfacial thermal resistance was experimentally evaluated for the first time. Furthermore, crucial impact of the resistance on thermal transport perturbation in a multilayered porous silicon structure was revealed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Thermal Sciences - Volume 134, December 2018, Pages 317-320
Journal: International Journal of Thermal Sciences - Volume 134, December 2018, Pages 317-320
نویسندگان
Pavlo Lishchuk, Anastasiya Dekret, Anton Pastushenko, Andrey Kuzmich, Roman Burbelo, Ali Belarouci, Vladimir Lysenko, Mykola Isaiev,