کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11023567 | 1701265 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low-voltage electric-double-layer MoS2 transistor gated via water solution
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Two-dimensional (2D) molybdenum disulfide (MoS2) has attracted growing interests due to its intriguing electrical, optical, and scalable properties. Exploring 2D MoS2-based electronic devices which are compatible with the biological systems are of great significance. Herein, a proof-of-concept water-gated multilayer MoS2 transistor is successfully demonstrated by using a side-gated device architecture. Electric-double-layer (EDL) effect is observed in such water-gated multilayer MoS2 transistor. The device exhibits a good performance with a high current on/off ratio of 4â¯Ãâ¯103, a small subthreshold swing of 0.27â¯V/dec, and a low operation voltage of â¼1.5â¯V, respectively. Furthermore, an ion-contributed quasi-EDL model can be further confirmed by the frequency-dependent capacitance and phase angle measurements. Such merits of water-containing systems coupled with MoS2 opens new opportunities to harness the excellent physical and electrical properties of 2D MoS2 for the potential bioelectronic devices integrated in biological systems for monitoring, diagnostic, and medical applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 150, December 2018, Pages 8-15
Journal: Solid-State Electronics - Volume 150, December 2018, Pages 8-15
نویسندگان
Junjie Guo, Jie Jiang, Bingchu Yang,