کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11023583 | 1701263 | 2018 | 29 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
AlN/GaN/Sapphire heterostructure for high-temperature packageless acoustic wave devices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, we investigate the performance of an AlN/IDT/GaN/Sapphire WLAW device used as a temperature sensor able to operate up to 500â°C. After validating a room-temperature GaN material constant set with basic SAW measurements performed on IDT/GaN/Sapphire structure, the AlN/IDT/GaN/Sapphire device is simulated to determine the optimal relative thicknesses of AlN and GaN films in order to obtain a good wave confinement. Based on these calculations, an experimental WLAW device is performed and electrically characterized. The full wave confinement is experimentally confirmed by the lamination of an acoustic absorber on top of the device: no change in the scattering parameters was observed. The WLAW device is then electrically characterized between the ambient temperature and 500â°C. A temperature coefficient of frequency (TCF) value of â34.6âppm/°C is obtained, demonstrating the potential of the WLAW AlN/IDT/GaN/Sapphire structure as a packageless temperature sensor. Finally, the theoretical TCF of the AlN/IDT/GaN/Sapphire structure was numerically calculated by changing the material constants of AlN, GaN and Sapphire according to the temperature coefficients available in the literature. The theoretical and experimental data were found in good accordance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 283, 1 November 2018, Pages 9-16
Journal: Sensors and Actuators A: Physical - Volume 283, 1 November 2018, Pages 9-16
نویسندگان
F. Bartoli, T. Aubert, M. Moutaouekkil, J. Streque, P. Pigeat, S. Zhgoon, A. Talbi, S. Hage-Ali, H. M'Jahed, O. Elmazria,