کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11263746 | 1646486 | 2018 | 23 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
X-ray absorption, photoemission and electron spin resonance studies of Ar+ ion implanted ZnO
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Defect induced room temperature ferromagnetism (RT-FM) in Ar+ implanted ZnO single crystal (ZnO-SC) is observe from the electron Spin Resonance (ESR) spectra and is correlated with their electronic structure studies using synchrotron radiation based X-ray absorption near edge structure (XANES) spectroscopy and valence band photoemission spectroscopy (VB-PES). Enhancement of absorption intensity at the edge of XANES spectra of Ar+ implanted ZnO indicates the increase of local density of states (DOS); which arises from the surface defects and/or dangling bonds in ZnO. VB-PES spectra change upon Ar+ implantation, becoming broader, implying the induced surface defects in ZnO-SC. X-ray photoelectron spectroscopy studies confirm that the Zn 2p3/2 core level peak shifts in lower energy side in Ar+ implanted ZnO-SC that is associated with the formation of oxygen vacancies/defects in ZnO-SC which is responsible for the RT-FM.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 229, December 2018, Pages 68-74
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 229, December 2018, Pages 68-74
نویسندگان
B. Ghosh, Dilip K. Mishra, H.T. Wang, T.S. Mahule, Sekhar C. Ray, W.F. Pong,