کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1163176 | 1490927 | 2016 | 6 صفحه PDF | دانلود رایگان |
• Ultraviolet irradiation on semiconductor nanoparticles produces electron–hole pairs.
• Hole oxidization results in the formation of hydroxyl radicals.
• Fluorine atoms of PFOSF can be specifically substituted with hydroxyl radicals.
• Capture of photoelectrons causes dissociation and fragmentation.
• Fragments are detected in negative ion mode.
A rapid and solvent free substitution reaction of a fluorine atom in perfluorooctane sulfonyl fluoride (PFOSF) with a hydroxyl radical is reported. Under irradiation of ultraviolet laser on semiconductor nanoparticles or metal surfaces, hydroxyl radicals can be generated through hole oxidization. Among all fluorine atoms of PFOSF, highly active hydroxyl radicals specifically substitute the fluorine of sulfonyl fluoride functional group. Resultant perfluorooctane sulfonic acid is further ionized through capture of photo-generated electrons that switch the neutral molecules to negatively charged odd electron hypervalent ions. The unpaired electron subsequently initiates α O–H bond cleavage and produces perfluorooctane sulfonate negative ions. Hydroxyl radical substitution and molecular dissociation of PFOSF have been confirmed by masses with high accuracy and resolution. It has been applied to direct mass spectrometric imaging of PFOSF adsorbed on surfaces of plant leaves.
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Journal: Analytica Chimica Acta - Volume 905, 28 January 2016, Pages 100–105