Slurry sampling flow injection chemical vapor generation inductively coupled plasma mass spectrometry for the determination of trace Ge, As, Cd, Sb, Hg and Bi in cosmetic lotions

• Determination of Ge, As, Cd, Sb, Hg and Bi in cosmetic lotions in a single run.
• Accurate analysis using isotope dilution and standard addition methods.
• Vapor generation ICP-MS yielded superior detection limits compared to ETV-ICP-MS.
• No sample dissolution increased sample through put.
• Analysis of GBW09305 Cosmetic (Cream) reference material for accuracy.

A slurry sampling inductively coupled plasma mass spectrometry (ICP-MS) method has been developed for the determination of Ge, As, Cd, Sb, Hg and Bi in cosmetic lotions using flow injection (FI) vapor generation (VG) as the sample introduction system. A slurry containing 2% m/v lotion, 2% m/v thiourea, 0.05% m/v l-cysteine, 0.5 μg mL−1 Co(II), 0.1% m/v Triton X-100 and 1.2% v/v HCl was injected into a VG-ICP-MS system for the determination of Ge, As, Cd, Sb, Hg and Bi without dissolution and mineralization. Because the sensitivities of the analytes in the slurry and that of aqueous solution were quite different, an isotope dilution method and a standard addition method were used for the determination. This method has been validated by the determination of Ge, As, Cd, Sb, Hg and Bi in GBW09305 Cosmetic (Cream) reference material. The method was also applied for the determination of Ge, As, Cd, Sb, Hg and Bi in three cosmetic lotion samples obtained locally. The analysis results of the reference material agreed with the certified value and/or ETV-ICP-MS results. The detection limit estimated from the standard addition curve was 0.025, 0.1, 0.2, 0.1, 0.15, and 0.03 ng  g−1 for Ge, As, Cd, Sb, Hg and Bi, respectively, in original cosmetic lotion sample.

Figure optionsDownload as PowerPoint slide