Holography and plasma oxidation for uniform nanoscale two dimensional channel formation of vertical organic field-effect transistors with suppressed gate leakage current

Vertical organic field-effect transistors (VOFETs) with nanoscale channel openings have been fabricated using pentacene as an active layer material. To achieve uniform nanoscale two-dimensional channel openings, a laser holography lithography has been introduced. Uniformly distributed and well-aligned holes with 250 nm diameter were successfully obtained with the laser holography lithography. VOFET devices with these channel openings have shown high on/off ratio of about 103 without any further treatment. Gate leakage current was also decreased with an additional insulating layer generated on the gate electrode sidewall via plasma oxidation.

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► We made pentacene-based vertical organic field-effect transistors (VOFETs).
► Laser holography lithography was introduced to make nanoscale channel openings.
► Uniformly distributed nanoscale two-dimensional channel openings were realized.
► Plasma oxidation was performed to oxidize sidewalls of gate electrodes in openings.
► Insulating sidewalls further reduced gate leakage current by MIS structure formation.