کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1292358 1497926 2016 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Si@SiOx/graphene hydrogel composite anode for lithium-ion battery
موضوعات مرتبط
مهندسی و علوم پایه شیمی الکتروشیمی
پیش نمایش صفحه اول مقاله
Si@SiOx/graphene hydrogel composite anode for lithium-ion battery
چکیده انگلیسی


• A porous 3D Si@SiOx/GH composite was synthesized for LIB anode material.
• Si@SiOx/GH composite showed a stable storage capacity of 1020 mAh g−1 at 4 A g−1.
• The outstanding performance could be attributed to the porous 3D structure of GH.

A porous 3D graphene hydrogel (GH) composite embedded with Si nanoparticles coated with an ultrathin SiOx layer (Si@SiOx/GH) is successfully synthesized using a solution-based self-assembly process. The thickness of the SiOx coating, formed by an ozone treatment of the 30–50 nm diameter Si particles, increases with the treatment temperature, and its formation results in the presence of Si2+ and Si4+ on the surface of the Si nanoparticles. The GH provides an electrically conducting network of interconnecting, micron-size open cells bounded by ultrathin stacked graphene sheets onto which the coated Si nanoparticles are dispersed. The agglomeration among the Si particles decreases with increasing extent of surface oxidation. Electrodes constructed with the Si@SiOx/GH containing 71 wt.% Si@SiOx exhibit a stable storage capacity of 1020 mAh g−1 at 4 A g−1 and 1640 mAh g−1 after 140 cycles at 0.1 A g−1. The outstanding electrochemical performance can be attributed to the porous, open cell 3D structure of GH, which provides a large internal space and flexible and electrically conductive graphenic matrix that can accommodate volumetric changes of Si nanoparticles and a highly porous 3D structure of high specific surface area that allows rapid diffusion of Li-ions and easy penetration of electrolyte.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Power Sources - Volume 306, 29 February 2016, Pages 42–48
نویسندگان
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