Dielectric properties of a polar ZnSnO3 with LiNbO3-type structure

The dielectric properties of a polar LiNbO3-type ZnSnO3 synthesized under high-pressure have been investigated with respect to the dielectric permittivity in the relative low frequency range of 10 kHz to 1 MHz and the SHG response at an optical frequency. The small temperature dependence of dielectric permittivity without anomaly was observed in the temperature range of 300 K to 780 K. LiNbO3-type ZnSnO3 exhibits the maximum SHG efficiency of approximately 50 times that of quartz. We then compare the structure and SHG response with those of iso-structural LiNbO3 and other known LiNbO3-type oxides. It was found that the magnitude of SHG response is correlated to the magnitude of intra-octahedral distortion, which is effectively brought by the second-order Jahn–Teller effect.

A polar LiNbO3 (LN)-type ZnSnO3 exhibits the maximum second harmonic generation (SHG) efficiency of approximately 50 times that of quartz.The magnitude of SHG response in LN-type oxides, ABO3 is correlated to the magnitude of intra-octahedral distortion.Figure optionsDownload as PowerPoint slideHighlights
► A polar LiNbO3(LN)-type ZnSnO3 was synthesized under high-pressure.
► The dielectric permittivity and second harmonic generation (SHG) response was investigated.
► LN-type ZnSnO3 exhibits the maximum SHG efficiency of approximately 50 times that of quartz.
► The SHG response in LN-type oxides is correlated to the magnitude of intra-octahedral distortion.