Synthesis and structural characterization of Al4Si2C5-homeotypic aluminum silicon oxycarbide, (Al6−xSix)(OyC5−y) (x∼0.8 and y∼1.6)

We have prepared a new layered oxycarbide, [Al5.25(5)Si0.75(5)][O1.60(7)C3.40(7)], by isothermal heating of (Al4.4Si0.6)(O1.0C3.0) at 2273 K near the carbon–carbon monoxide buffer. The crystal structure was characterized using X-ray powder diffraction, transmission electron microscopy and energy dispersive X-ray spectroscopy (EDX). The title compound is trigonal with space group R3̄m (centrosymmetric), Z=3, and hexagonal cell dimensions a=0.32464(2) nm, c=4.00527(14) nm and V=0.36556(3) nm3. The atom ratios Al:Si were determined by EDX, and the initial structural model was derived by the direct methods. The final structural model showed the positional disordering of one of the three types of Al/Si sites. The reliability indices were Rwp=4.45% (S=1.30), Rp=3.48%, RB=2.27% and RF=1.25%. The crystal is composed of three types of domains with nearly the same fraction, one of which has the crystal structure of space group R3¯m. The crystal structure of the remaining two domains, which are related by pseudo-symmetry inversion, is noncentrosymmetric with space group R3m.

Graphical AbstractA new aluminum silicon oxycarbide, (Al6−xSix)(OyC5−y) (x∼0.8 and y∼1.6). The crystal is composed of three types of domains (I, II and III), and hence the structure is represented by a split-atom model. Individual crystal structures can be regarded as layered structures, which consist of A-type [(Al,Si)4(O,C)4] unit layers and B-type [(Al,Si)(O,C)2] single layers.Figure optionsDownload as PowerPoint slide