کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1332701 979052 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The effect of nitrogen on the cycling performance in thin-film Si1−xNx anode
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی معدنی
پیش نمایش صفحه اول مقاله
The effect of nitrogen on the cycling performance in thin-film Si1−xNx anode
چکیده انگلیسی

The effects of nitrogen on the electrochemical properties of silicon–nitrogen (Si1−xNx) thin films were examined in terms of their initial capacities and cycling properties. In particular, Si0.76N0.24 thin films showed negligible initial capacity but an abrupt capacity increase to ∼2300 mA h/g after ∼650 cycles. The capacity of pure Si thin films was deteriorated to ∼20% of the initial level after 200 cycles between 0.02 and 1.2 V at 0.5 C (1 C=4200 mA/g), whereas the Si0.76N0.24 thin films exhibited excellent cycle-life performance after ∼650 cycles. In addition, the Si0.76N0.24 thin films at 50 °C showed an abrupt capacity increase at an earlier stage of only ∼30 cycles. The abnormal electrochemical behaviors in the Si0.76N0.24 thin films were demonstrated to be correlated with the formation of Li3N and Si3N4.

The Si0.76N0.24 thin films showed negligible initial capacity, but an abrupt capacity increase to ∼2300 mA h/g after ∼650 cycles, followed by excellent cycle-life performance. This abnormal electrochemical behavior was demonstrated to be correlated with the formation of Li3N and Si3N4.Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Solid State Chemistry - Volume 181, Issue 9, September 2008, Pages 2139–2142
نویسندگان
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