A family of 1,1,1,2,2,2-hexa(-primary-)amino-disilanes as potential CVD precursors: Tuning thermal properties by small variation of the substituent

A family of 1,1,1,2,2,2-hexaamino-disilanes with the formula (RHN)3Si-Si(NHR)3 (R = nPr, iPr, nBu, iBu, sBu, Cy) as precursors for the CVD growth of silicon-based films has been synthesized and characterized by 1H NMR, 13C NMR, 29Si NMR, EI-HRMS, elemental analysis and X-ray diffraction where necessary. Thermal properties, including stability, volatility, transport behavior and vapor pressure were evaluated by thermogravimetric analysis (TGA) to verify that thermal properties of the precursors can be tuned by small variation of the substituents form secondary amino to primary amino units and to confirm their suitability for the CVD procedure. Finally, deposition was accomplished in a hot wall CVD reactor, which preliminarily verified the ability of these compounds as CVD precursors.

A family of 1,1,1,2,2,2-hexaamino-disilanes with the formula (RHN)3Si-Si(NHR)3 (R = alkyl) as precursors for the CVD growth of silicon-based films has been synthesized and characterized. Thermal properties, including stability, volatility, transport behavior and vapor pressure were evaluated by thermogravimetric analysis (TGA) to verify that thermal properties of the precursors can be tuned by small variation of the substituents form secondary amino to primary amino units and to confirm their suitability for the CVD procedure.Figure optionsDownload as PowerPoint slide