Novel valuable fluorine free copper(I) precursors for copper chemical vapor deposition

Novel fluorine free (β-diketonate)Cu(I)BTMSA precursors (where BTMSA is bis(trimethylsilyl) acetylene) were prepared in good yield (63–80%) by a simple acid–base reaction. The starting β-diketone structure was modified for tailoring physico-chemical properties of synthesized precursors. High volatile, relative thermally stable and low-melting precursors were prepared when asymmetric β-diketones were used. By using the (1-(cyclobutyl)-1,3-butandionate)Cu(I)BTMSA precursor, highly pure, compact and smooth copper films were deposited on Ta/TaN substrates at deposition temperatures as low as 150 °C.

Novel volatile, fluorine free (β-diketonate)Cu(I)(Bis(trimethylsilyl) acetylene) precursors were prepared in good yield (63–80%) by a simple acid–base reaction. By using these precursors, highly pure, compact and smooth copper films were deposited on Ta/TaN substrates at deposition temperatures as low as 150 °C.Figure optionsDownload as PowerPoint slide