کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1440172 | 1509360 | 2016 | 4 صفحه PDF | دانلود رایگان |
• The inkjet-printed thin-film transistors (TFTs) were fabricated with the polymer-semiconductor-wrapped single-walled carbon nanotube (PSC/SWCNT) networks.
• By introducing the insulating polymers into the PSC/SWCNT network, the improved uniformity of the performance of inkjet-printed PSC/SWCNT network TFT was achieved.
• The PSC/SWCNT networks blended with the polymer binder resulted in high-performance PSC/SWCNT network based TFTs with a relatively uniform field-effect mobility of 7.57 ± 3.32 cm2/V·s.
The enhanced performance uniformity of thin-film transistors (TFTs) fabricated by inkjet printing of polymer-semiconductor-wrapped single-walled carbon nanotube (PSC/SWCNT) networks blended with an insulating polymer binder was investigated. The inkjet-printed PSC/SWCNT network TFTs exhibited varied device performance with a field-effect mobility of 6.15 ± 6.75 cm2/V·s; the inkjet-printed TFTs fabricated using the poly(methyl methacrylate) (PMMA)-blended PSC/SWCNT layer as a channel exhibited relatively uniform device performance, with a field-effect mobility of 7.57 ± 3.32 cm2/V·s. This notable difference in device performance uniformity is attributed to the blended PMMA, which prevented the PSC/SWCNTs from forming random aggregates and facilitated their uniform percolation when they were inkjet-printed.
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Journal: Synthetic Metals - Volume 217, July 2016, Pages 57–60