A novel device behavior of Ag/MgPc/n-GaAs/Au-Ge organic based Schottky diode

• A novel device behavior of Ag/MgPc/n-GaAs/Au-Ge organic based Schottky diode is fabricated.
• A layer of metallic phthalocyanine as organic compound is grown by spin-coating process.
• Current–voltage characteristics are measured under vacuum and at room temperature.
• Electronic parameters such as ideality factor, series resistance, barrier height are extracted from I–V characteristics.
• Cheung and Norde methods are used to extract such parameters..

The fabricated Ag/MgPc/n-GaAs/Au-Ge Schottky diode is investigated by using the electrical parameters obtained from the current–voltage (I–V) characteristics measurement at room temperature under dark and light conditions. The Cheung and Norde methods with the I–V characteristics are used to calculate and extract the Schottky diode parameters under dark and light (100 mW/cm2) comprising ideality factor n, barrier height (Φb), series resistance (RS) short circuit current density (JSC) and open circuit voltage (VOC) are respectively found to be 3.64, 0.53 eV, 32.67 Ω, 1.129 mA/cm2 and 0.35 V. It is seen that the value of RS and JSC are low compared to the literature work which is ascribed to the configuration of Schottky diode structure such as substrate, front and back contacts. Here, we review the contribution to the understanding of magnesium phthalocyanine (MgPc) based Schottky diode for the organic microelectronics applications.

The cross sectional of Ag/MgPc/n-GaAs/Au-Ge Schottky diode.Figure optionsDownload as PowerPoint slide