The electrical characteristics of thin film transistors with graphene oxide and organic insulators

• Nanographene oxide powders were fabricated by Hummers method.
• We used insulator layers which are polymethylmethacrylate (PMMA) and polyvinyl phenol (PVP) for graphene oxide based thin flim transistor.
• The n-GO based organic thin film transistor was found to exhibit a high mobility of 0.375 cm2/V.s.

We have studied the electrical characteristics of nanographene oxide (n-GO) thin film transistor and n-GO organic thin film transistors with poly(methyl methacrylate) (PMMA) and poly-4-vinylphenol (PVP) as organic insulators. One of the alternate methods to prepare GO is achieved by oxidizing graphite via modified Hummers method. In this study, the GO was synthesized by a modified Hummers method. The graphene oxide thin films with PMMA and PVP were prepared by spin coating the precursor solution on a GO/SiO2 dielectrics bilayer. The graphene oxide thin film transistor was found to exhibit a high mobility of 0.375 cm2/V.s. This indicates that n-GO film has a more important effect to fabricate a high mobility n-GO thin film transistor than n-GO based thin film transistor with PMMA and PVP.

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