کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1442660 | 988129 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interface effect of oxygen doping in polythiophene
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Interface effect of oxygen doping in polythiophene Interface effect of oxygen doping in polythiophene](/preview/png/1442660.png)
چکیده انگلیسی
Long-time evolution of the electrical characteristics for two-terminal and transistor of poly(3-hexylthiophene) film with various gate dielectric interfaces are measured. The oxygen doping is found to depend sensitively on the amount of hydroxyl groups of the interface and irreversible after long time in vacuum except for quartz. For a given interface, dip-coated film always has a higher doping level and slower de-doping than spin-coated films because of higher porosity. With careful control of the oxygen level transistor with mobility of 0.12 cm2/V s and on–off ratio of 29,000 are obtained for dip-coated film on glass substrate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 159, Issue 12, June 2009, Pages 1131–1134
Journal: Synthetic Metals - Volume 159, Issue 12, June 2009, Pages 1131–1134
نویسندگان
Chien-Cheng Liu, Chia-Ming Yang, Wen-Hsing Liu, Hua-Hsien Liao, Sheng-Fu Horng, Hsin-Fei Meng,