کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1443661 | 1509474 | 2006 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modeling electrical characteristics of thin-film field-effect transistors: II: Effects of traps and impurities
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Based on a new model for thin-film field-effect transistors, in which the active layer is treated as purely two-dimensional, the effects of impurities on the electrical characteristics are discussed. Localized electronic levels are introduced into the model. It is shown that the presence of traps readily accounts for the non-linearities in the current-voltage curves. Trap states can also explain the temperature dependence of the current and mobility, including the so-called Meyer-Neldel Rule. Finally, transients are qualitatively discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 156, Issues 21–24, 1 December 2006, Pages 1316–1326
Journal: Synthetic Metals - Volume 156, Issues 21–24, 1 December 2006, Pages 1316–1326
نویسندگان
P. Stallinga, H.L. Gomes,