Low dielectric loss and enhanced tunability of Ba(Zr0.3Ti0.7)O3-based thin film by sol–gel method

In this work, dopants and buffer layers were employed to simultaneously lower the dielectric loss and enhance the dielectric tunability of Ba(Zr0.3Ti0.7)O3 (BZT) thin films. The BZT, 1 mol% La doping BZT (BZTL) with and without La0.5Sr0.5CoO3 (LSCO) buffer layers were prepared by sol–gel technique. The dielectric properties of the thin films were investigated as a function of frequency and current bias field. As a result, the BZTL thin film with LSCO buffer layer showed lower dielectric loss and higher tunability simultaneously, which can be a promising candidate for tunable microwave device applications.