Development of relaxor ferroelectric materials for screen-printing on alumina and silicon substrates

The paper describes processing and dielectric properties of 0.65Pb(Mn1/3Nb2/3)O3-0.35PbTiO3 films deposited on alumina and silicon substrates by screen-printing. Ink development and problems associated with adhesion of electrodes to substrate are discussed in detail. The relative dielectric permittivity, as large as 13,000 have been obtained on SiO2 substrate after processing optimization.