Electrical conduction mechanism and gas sensing properties of Pd-doped TiO2 films

Undoped and Pd-doped titanium oxide thin films (0.5 wt.%) were prepared by the sol–gel technique (dip-coating) on glass and silicon substrates. The as-deposited thin films were compacted by subjecting them to different annealing temperatures (300 °C, 500 °C). The dependences of the electrical conductivity vs. inverse temperature were investigated in air and in vacuum. A study of the effects of Pd-doping, annealing temperature and ambient conditions on their electrical properties was performed. The sensing behavior of titanium oxide thin films exposed to some reducing gases (methane, acetone, ethanol, formaldehyde and liquefied petroleum gas) was carried out, by means of electrical conductivity measurements. All the studied films are most sensitive to formaldehyde, with a special remark for the Pd-doped ones deposited on silicon substrates.

Research highlights
► TiO2 thin films doped with palladium.
► All the films are most sensitive to formaldehyde.
► 0.5 wt.% Pd titania films on silicon annealed at 300 °C, best sensing gas properties.
► Validity of the grain boundary model for the thermal activation of conductivity.