کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1484121 | 1510558 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Forouhi–Bloomer analysis to study amorphization in Si
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
Single crystal Si (1 0 0) was irradiated with 120 keV Ar+ for fluences ranging from 6 × 1013 to 1 × 1016 ions/cm2 and the real and imaginary parts of the dielectric function were measured using a spectroscopic ellipsometer in the energy range 1.5–5 eV. The pseudodielectric functions of the irradiated specimens were analyzed using Forouhi–Bloomer model for the first time. It was found that a minimum of four absorption terms is required to obtain ‘good’ fits to the experimental data. The parameters of the fit show distinct behavior above and below amorphization threshold. This paper demonstrates that Forouhi–Bloomer interband model for pseudodielectric functions can be used to follow structural changes too.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 351, Issues 52–54, 15 December 2005, Pages 3866–3869
Journal: Journal of Non-Crystalline Solids - Volume 351, Issues 52–54, 15 December 2005, Pages 3866–3869
نویسندگان
S. Tripura Sundari,