Formation of surface structures on amorphous chalcogenide films

The high spatial resolution of the localized structural transformations induced by different irradiations in amorphous chalcogenides, as well as the possibility of inducing volume expansion, promotes applications of these inorganic resists for optical recording, data storage and makes them attractive for nanolithography. This paper focuses on the fabrication of surface reliefs at submicrometer length scales in a direct, one-step process of recording by light or ion beam on Se layers or Se/As2S3 nanolayered films due to induced volume expansion.