کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1485770 | 991671 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Transient photoconductivity studies of band tails states in compensated a-Si:H
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
The density of conduction band tail states has been determined for a series of compensated a-Si:H films using transient photoconductivity measurements. Relative to undoped material, the energy width of shallow tail states lying within 0.45Â eV of the conduction band edge are found to be insensitive to the level of compensated doping for doping levels up to 1000Â vppm. An observed reduction in photocurrent magnitude as the doping is increased is consistent with a corresponding reduction in the electron extended state mobility. The magnitude of the mobility reduction is found to be quantitatively consistent with potential fluctuations which arise from ionized dopants for compensated doping levels up to about 100Â vppm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 353, Issue 2, 1 February 2007, Pages 130-135
Journal: Journal of Non-Crystalline Solids - Volume 353, Issue 2, 1 February 2007, Pages 130-135
نویسندگان
D.M. Goldie,