کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1486917 | 1510691 | 2016 | 6 صفحه PDF | دانلود رایگان |
• Monoclinic and cubic phases of Ga2S3 were obtained.
• PbCl2 solvent produces considerable contamination of impurities in Ga2S3.
• IR-THz spectra presents Ga2S3 as a promising nonlinear material.
Monoclinic and cubic Ga2S3 crystals were obtained by Bridgman and flux methods. For the first time optical properties are measured in the bulk samples including THz range. The transparency range 0.44–25 μm is recorded. Ga2S3 crystal demonstrated 20 times higher light induced damage threshold compared to GaSe. No phonon absorption peaks are found in the THz range at wavenumbers below 100 cm−1. IR and THz optical, as well as other physical properties render Ga2S3 among the prospective materials for THz applications.
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Journal: Materials Research Bulletin - Volume 84, December 2016, Pages 462–467