کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1487458 1510698 2016 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ab-initio calculations of semiconductor MgGeP2 and MgGeAs2
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Ab-initio calculations of semiconductor MgGeP2 and MgGeAs2
چکیده انگلیسی


• MgGeP2 and MgGeAs2 are semiconductor compounds.
• MgGeP2 and MgGeAs2 are energetically, mechanically and dynamically stable.
• The electronic charge density contour plot shows that the nature of bonding is a mixture of ionic-covalent.

In this study, we focus on structural, electronic, elastic, lattice dynamic and optic properties of MgGeP2 and MgGeAs2 using ab-initio density-functional theory (DFT) within Armiento-Mattson 2005 (AM05) scheme of the generalized gradient approximation (GGA) for the exchange-correlation potential. Our computed structural results are in reasonable agreement with the literature. The band gap of these compounds is predicted to be direct. Our elastic results prove that these compounds are mechanically stable. The obtained phonon spectra of MgGeP2 and MgGeAs2 do not exhibit any significant imaginary branches using GGA-AM05 for the exchange-correlation approximation. Further analysis of the optical response of the dielectric functions, optical reflectivity, refractive index, extinction coefficient and electron energy loss delves into for the energy range of 0–22.5 eV. It motivated that there exists an optical polarization anisotropy of these compounds for optoelectronic device applications.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 77, May 2016, Pages 300–306
نویسندگان
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