A study on in situ growth of TaC whiskers in Al2O3 matrix powder for ceramic cutting tools

In situ growth of tantalum carbide (TaC) whiskers was synthesized in an α-Al2O3 matrix powder via a carbothermal reduction technique within a temperature range of 1350–1500 °C in an argon atmosphere. The starting materials consisted of Ta2O5, C, Ni and NaCl powders. Different mixing methods and various reaction temperatures were employed. Most of the prepared whiskers were 0.2–0.5 μm in diameter and 5–15 μm in length. The reaction temperature of 1400–1450 °C was suitable for the growth of TaC whiskers and a wet mixing method was beneficial to increase the whisker yield. Some of the whiskers exhibited the needle shape while others exhibited the screw shape. The growth mechanism of the whiskers was a complex mechanism involving a helical screw dislocation mechanism and a vapor–liquid–solid process. No obvious influences of the Al2O3 matrix powder on the growth of TaC whiskers were found and the major impurities in the obtained powder were TaC particles, nickel and unreacted carbon.

In situ growth of TaC whiskers (TaCw) was synthesized in an α-Al2O3 matrix powder via a carbothermal reduction technique. The whiskers were 0.2–0.5 μm in diameter and 5–15 μm in length; they were straight and had smooth surfaces.Figure optionsDownload as PowerPoint slideHighlights
► In situ growth of TaC whiskers was synthesized in an α-Al2O3 matrix powder.
► The wet mixing method and 1450 °C were suitable for whiskers growth.
► The growth of TaC whiskers is not influenced by the Al2O3 powder.
► The major impurities were TaC particles, nickel and unreacted carbon.