کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1514213 | 1511223 | 2011 | 5 صفحه PDF | دانلود رایگان |
Silicon Carbide films for silicon solar cell application were deposited by means of RF sputtering process. Films were deposited from mixed Silicon – Graphite target onto silicon Cz <100> wafers. Samples were characterized by Photo Conductance Decay (PCD) method to measure the effective lifetime. The thickness and refractive index of the films deposited were measured using a spectroscopic Ellipsometer. X-Ray Diffraction (XRD) was performed to measure the crystallinity of the samples. Results have indicated that the deposited films were mainly amorphous. The crystalline fraction was present in samples with a better passivation level. Results from PCD show that the effective lifetime improved up to 38 μs which corresponds to a Voc=641 mV. Deposition rates up to 30 nm/min were obtained for samples at 0.9 kW bias power.
Journal: Energy Procedia - Volume 10, 2011, Pages 71-75