کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1518223 | 1511609 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of local segregation in GaInNAs using EXAFS measurements
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
We investigated the local atomic arrangements around In atoms of plasma-assisted molecular beam epitaxy (MBE) grown GaInNAs films using In K-edge extended X-ray absorption fine structure (EXAFS) oscillations. The obtained radial distribution function (RDF) clearly showed two peaks coming from the first nearest In-As bond and the second nearest In-cation bond. These two atomic distances were longer than the bond lengths theoretically calculated under an assumption of random distributions of Ga and In on cation sites and N and As on anion sites, respectively. It means that there are strong In-N and In-In correlations in GaInNAs films. The strong correlations suggest the formation of the InNAs-like particles, which can cause the spacially inhomogeneous emission.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 69, Issues 2â3, FebruaryâMarch 2008, Pages 298-301
Journal: Journal of Physics and Chemistry of Solids - Volume 69, Issues 2â3, FebruaryâMarch 2008, Pages 298-301
نویسندگان
Takahiro Mori, Takashi Hanada, Toshiharu Morimura, Genki Kobayashi, Takafumi Yao, Takao Miyajima, Tomoya Uruga,